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Single Crystal Substrates

Standard
Specifications
Impurities:
Nitorogen concentration: less than 8ppm, B & Si : below SIMS resolution
Crystal orientation:
(100) with the off angle of 3°
Polishing:
Regular (Ra＜5nm), Fine (Ra＜2nm)
Size:
1 x 1 – 15 x 15mm, Thickness: 0.03 – 3mm
15 x 15 – 30 x 30mm, Thickness: 0.05 – 3mm
Special
Specifications
  1. ① (110), (111) can be fabricated with length less than 3mm. Width can be selected (ex. 3 x 3mm, 6 x 3mm)
  2. ② (100) Off angle: Between 0 and 5 degree toward selected direction
High quality
Substrate

FWHM of X-ray locking curve can be selected. (ex. FWHM＜50arcsec, FWHM＜30arcsec)
StandardSpecifications


StandardSpecifications


Mosaic Substrates

  • *Joint from 2 to 9 single-crystal substrates that each size is 10 x 10mm.
  • *Orientation is (100).
  • * Size: ＜30x30mm, Thickness 0.03~3mm
MosaicSubstrates1
MosaicSubstrates2

(111) Single Crisytal Substrate

Standard Specifications
Impurities:
1. Low N Substrate Nitrogen concentration: less than 0.5ppm, B & Si : below SIMS resolution
2. Standard Substrate Nitrogen concentration: less than 0.5ppm, B & Si : below SIMS resolution
Crystal orientation:
(111) with the off angle of 3°
Polishing:
Regular Ra<5nm
Size:
Length is less than 3mm, and width can be selected (ex. 3 x 3mm, 6 x 3mm)
Thickness:
0.2mm – 0.5mm
Single Crisytal Substrate


Heavy Bron-Doped Diamond Substrates

Free Standing Substrate

B Concentration

2×1020 – 4×1020/cm3
Resistivity

Less than 20mΩcm
Thickness

0.2mm
Size

Less than 13x13mm
Surface

Both face polished (Ra<5nm or Ra<2nm)
Free Standing Substrate


Heavy Bron Doped Epitaxial Substrate

B Concentration

2×1020 – 4×1020/cm3
Thickness of
boron doped layer

0.03 – 0.2 mm

(Polishing one face needs minimum 0.5mm thickness)
Largest size

Single crystal less than 8x8mm, Mosaic crystal less than 18x18mm
Substrate

Standard EDP substrate with thickness 0.3-0.5mm
Heavy Bron Doped Epitaxial Substrate

Epi-layer on Substrates

1. B-doped epitaxial layer

B concentration:
2～10×1016/cm3
Thickness:
0.5～10µm
Mobility:
1500cm2/Vs or more

2. High purity epitaxial layer

N concentration:
＜1ppm
Thickness:
10～100µm
Remarks:
Can be done for Mosaic substrates Can be polished when thickness is more than 30 µm

We will offer various substrates for each customer inquiry.

Details of necessary specification will be required for your inquiries.

Model Number Size (mm) Remarks
RH30303PP 30×30×0.3 Large Single-Crystal Substrate,
both faces regular polishing
RH333Pf2 3×3×0.3 Substrate with the off angle of 2°
RH555PP 5×5×0.5 Both faces regular polishing
RH333KPP 3×3×0.3 Standard Substrate,
(111)Orientation, both faces regular polishing
RC333KPP 3×3×0.3 Low N Substrate,
(111)Orientation, both faces regular polishing
RB552PP 5×5×0.2 Heavy bron doped substrate
RB443PPE20 4×4×0.3 Heavy boron doped epitaxial layer 0.2mm on substrate
RH553PPN50PF 5×5×0.3 High purity epitaxial layer 0.05mm on substrate
RH20205PV 20×20×0.5 Mosaic substrate, one face regular polishing
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