Products Semiconductor / Diamond Substrates

  1. HOME
  2. Products
  3. Semiconductor / Diamond Substrates

Single Crystal Substrates

Standard
Specifications
Impurities:
Nitrogen concentration: less than 8ppmB & Si : below SIMS resolution
Crystal orientation:
(100) with the off angle of 3°
Polishing:
Regular (Ra<5nm), Fine (Ra<2nm)
Size:
1 x 1 – 10 x 10mm, Thickness: 0.03 – 3mm
Special
Specifications
  1. ① (110), (111) can be fabricated with length less than 3mm. Width can be selected (ex. 3 x 3mm, 6 x 3mm)
  2. ② (100) Off angle: Between 0 and 5 degree toward selected direction
High quality
Substrate

FWHM of X-ray locking curve can be selected. (ex. FWHM<50arcsec, FWHM<30arcsec)

StandardSpecifications

Mosaic Substrates

  • *Joint from 2 to 9 single-crystal substrates that each size is 10 x 10mm.
  • *Orientation is (100).
  • * Size: <30x30mm, Thickness 0.03~3mm
MosaicSubstrates1
MosaicSubstrates2

Epi-layer on Substrates

1. B-doped epitaxial layer

B concentration:
2~10×1016/cm3
Thickness:
0.5~10µm
Mobility:
1500cm2/Vs or more

2. High quality epitaxial layer

N concentration:
<1ppm
Thickness:
10~100µm
Remarks:
Can be done for Mosaic substrates Can be polished when thickness is more than 30 µm

We will offer various substrates for each customer inquiry.

Details of necessary specification will be required for your inquiries.

Model Number Size (mm) Remarks
RH333Pf2 3×3×0.3 Substrate with the off angle of 2°
RH555PP 5×5×0.5 Both faces regular polishing
RH333KPP 3×3×0.3 (111) Orientation, both faces regular polishing
RH25255PV 25×25×0.5 Mosaic substrate, one face regular polishing

Contact Us

Please feel free to contact us about EDP
technology and products.